Current issues in the physics of heavily doped semiconductors at the metal-insulator transition - Discussion

被引：0

作者：

Kravchenko, SV ^{[1
]}

机构：

[1] CUNY City Coll, New York, NY 10031 USA

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1735期

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D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：155 / 156

页数：2

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