DANGLING-BOND RECOMBINATION AND PHOTOCONDUCTIVITY OF a-Si:H.

被引：0
|
作者：
Kurova, I.A. [1 ]
Zvyagin, I.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR
来源：
Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期
关键词：
PHOSPHORUS - SEMICONDUCTING FILMS - Doping - SEMICONDUCTOR MATERIALS - Amorphous;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature quenching of the photoconductivity of P-doped glow-discharge a-Si:H films was observed after the prolonged preliminary illumination. To explain it, a recombination model is discussed which takes into account the broadening of the distributions of energies of the dangling-bond states in the mobility gap and the effect of temperature on the optically induced repopulation of these states.
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页码：207 / 210
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