DANGLING-BOND RECOMBINATION AND PHOTOCONDUCTIVITY OF a-Si:H.

被引：0
|
作者：
Kurova, I.A. [1 ]
Zvyagin, I.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR
来源：
Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期
关键词：
PHOSPHORUS - SEMICONDUCTING FILMS - Doping - SEMICONDUCTOR MATERIALS - Amorphous;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature quenching of the photoconductivity of P-doped glow-discharge a-Si:H films was observed after the prolonged preliminary illumination. To explain it, a recombination model is discussed which takes into account the broadening of the distributions of energies of the dangling-bond states in the mobility gap and the effect of temperature on the optically induced repopulation of these states.
引用
下载
收藏
页码：207 / 210
相关论文
共 50 条
  • [31] Dangling-bond logic gates on a Si(100)-(2 x 1)-H surface
    Kawai, Hiroyo
    Ample, Francisco
    Wang, Qing
    Yeo, Yong Kiat
    Saeys, Mark
    Joachim, Christian
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (09)
  • [32] Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H
    Engelund, Mads
    Zuzak, Rafal
    Godlewski, Szymon
    Kolmer, Marek
    Frederiksen, Thomas
    Garcia-Lekue, Aran
    Sanchez-Portal, Daniel
    Szymonski, Marek
    SCIENTIFIC REPORTS, 2015, 5
  • [33] Electron transport through dangling-bond silicon wires on H-passivated Si(100)
    Kepenekian, Mikael
    Novaes, Frederico D.
    Robles, Roberto
    Monturet, Serge
    Kawai, Hiroyo
    Joachim, Christian
    Lorente, Nicolas
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (02)
  • [34] ELECTRON-NUCLEAR DOUBLE-RESONANCE OF DANGLING-BOND CENTERS IN A-SI-H
    YOKOMICHI, H
    HIRABAYASHI, I
    MORIGAKI, K
    SOLID STATE COMMUNICATIONS, 1987, 61 (11) : 697 - 701
  • [35] ISOLATING THE RATE OF LIGHT-INDUCED ANNEALING OF THE DANGLING-BOND DEFECTS IN A-SI-H
    GLESKOVA, H
    BULLOCK, JN
    WAGNER, S
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 183 - 186
  • [36] RECOMBINATION AT DANGLING BONDS AND STEADY-STATE PHOTOCONDUCTIVITY IN ALPHA-SI-H
    VAILLANT, F
    JOUSSE, D
    PHYSICAL REVIEW B, 1986, 34 (06): : 4088 - 4098
  • [37] Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements
    Grabowski, A
    Nowak, M
    Tzanetakis, P
    THIN SOLID FILMS, 1996, 283 (1-2) : 75 - 80
  • [38] Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
    Roura, P
    Farjas, J
    Rath, C
    Serra-Miralles, J
    Bertran, E
    Cabarrocas, PRI
    PHYSICAL REVIEW B, 2006, 73 (08)
  • [39] THz photoconductivity in a-Si:H
    Shimakawa, Koichi
    Wagner, Tomas
    Frumar, Miloslav
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (05): : 1004 - 1007
  • [40] Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface
    Lee, Jun-Ho
    Kim, Sun-Woo
    Cho, Jun-Hyung
    JOURNAL OF CHEMICAL PHYSICS, 2013, 138 (10):
12345