INFLUENCE OF DANGLING BOND DEFECTS ON RECOMBINATION IN A-SI-H

被引:2
|
作者
DERSCH, H
SKUMANICH, A
AMER, NM
机构
[1] Lawrence Berkeley Lab, Berkeley, CA,, USA, Lawrence Berkeley Lab, Berkeley, CA, USA
关键词
ACKNOWLEDGEMENT One of the authors (HD) gratefully acknowledges a grant from the Deutsche Forschungsgemeinschaft. This work was supported in part by the Director; Office of Energy Research; Physical and Technological Research Division of the U. S. Department of Energy under Contract No. DE-AC03-76SF00098;
D O I
10.1016/0022-3093(85)90742-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
8
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页码:651 / 654
页数:4
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