Annealing effects of excimer-laser-produced large-grain poly-Si thin-film transistors

被引：0
|
作者：
Choi, Do-Hyun [1 ]
Matsumura, Masakiyo [1 ]
机构：
[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 1 B期
关键词：
Field effect transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Stress relaxation of poly-Si film formed by excimer laser annealing
    Matsuo, N
    MATERIALS TRANSACTIONS, 2005, 46 (09) : 1958 - 1964
  • [32] Poly-Si/poly-SiCx heterojunction thin-film transistors
    Choi, K
    Matsumura, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 401 - 405
  • [33] CURRENT DLTS MEASUREMENTS ON POLY-SI THIN-FILM TRANSISTORS
    AYRES, JR
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 179 - 182
  • [34] Effects of laser activation on device behaviour for poly-Si thin-film transistors with different channel lengths
    Fan, CL
    Yang, TH
    Chen, YC
    Lin, J
    ELECTRONICS LETTERS, 2006, 42 (06) : 374 - 375
  • [35] High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing
    Hu, Hsin-Hui
    Huang, Hsin-Ping
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) : 345 - 347
  • [36] LEAKAGE CURRENT REDUCTION OF POLY-SI THIN-FILM TRANSISTORS BY 2-STEP ANNEALING
    AOYAMA, T
    MOCHIZUKI, Y
    KAWACHI, G
    OIKAWA, S
    MIYATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1B): : L84 - L87
  • [37] Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
    Choi, YW
    Lee, JN
    Jang, TW
    Ahn, BT
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (01) : 2 - 4
  • [38] HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTORS WITH EXCIMER-LASER ANNEALED SILICON-NITRIDE GATE
    SHIMIZU, K
    NAKAMURA, K
    HIGASHIMOTO, M
    SUGIURA, O
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 452 - 457
  • [39] High-performance poly-Si thin-film transistors with excimer-laser annealed silicon-nitride gate
    Shimizu, Kazuhiro
    Nakamura, Kyoutarou
    Higashimoto, Masayuki
    Sugiura, Osamu
    Matsumura, Masakiyo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 452 - 457
  • [40] Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors
    Kimura, Mutsumi
    Taya, Jun
    Nakashima, Akihiro
    SOLID-STATE ELECTRONICS, 2012, 72 : 52 - 55
12345