HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTORS WITH EXCIMER-LASER ANNEALED SILICON-NITRIDE GATE

被引：13

作者：

SHIMIZU, K

NAKAMURA, K

HIGASHIMOTO, M

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, O-okayama, Meguro-ku

[2] On leave from Fujitsu Corporation, Kawasaki, 211, Kamiodanaka, Nakahara-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

THIN-FILM TRANSISTOR; SILICON-NITRIDE GATE; EXCIMER LASER ANNEALING; POLY-SI; BOTTOM-GATE TFT; ON-CHIP PROCESS;

D O I：

10.1143/JJAP.32.452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report, for the first time, that ArF excimer laser annealing can improve silicon-nitride film properties. It is shown that the 15-nm-thick top region of the laser preannealed film had a lower hydrogen content and a much lower etching rate than the as-deposited film. The laser preannealed film is very useful as the gate insulator of high-performance bottom-gate thin-film transistors fabricated with the laser-recrystallized poly-Si film. The field-effect mobility of electrons was as high as 200 cm2/V.s, while the mobility was as low as 40 cm2/V-s without preannealing the silicon-nitride film.

引用

页码：452 / 457

页数：6

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