Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field

被引：1
|
作者：
De Meester, R.H.J. [1 ]
Peeters, F.M. [1 ]
Lakrimi, M. [2 ]
Nicholas, R.J. [2 ]
Poulter, A.J.L. [2 ]
Mason, N.J. [2 ]
Walker, P.J. [2 ]
机构：
[1] Departement Natuurkunde, Universiteit Antwerpen (UIA), B-2610 Antwerpen, Belgium
[2] Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
来源：
Physica E: Low-Dimensional Systems and Nanostructures | 2000年 / 7卷 / 01期
关键词：
Band structure - Electron cyclotron resonance - Electron transitions - Magnetic field effects - Mathematical models - Semiconducting gallium compounds - Semiconducting indium compounds - Semiconductor quantum wells;
D O I：
10.1016/S1386-9477(99)00318-5
中图分类号：
学科分类号：
摘要：
We present a theoretical study of intersubband transitions (IST) in InAs/GaSb superlattices in the presence of a parallel magnetic field. Starting from a model describing a single electron in a single quantum well and extending it to include many-body effects and the non-parabolicity of the InAs conduction band we are able to explain the recent cyclotron resonance experiments on narrow and wide InAs/GaSb quantum wells.
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页码：93 / 96
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