Influence of band folding in InAs/GaSb superlattices

被引:1
|
作者
Tilton, ML [1 ]
Dente, GC
机构
[1] Boeing Def & Space Grp, Albuquerque, NM 87106 USA
[2] GCD Associates, Albuquerque, NM 87110 USA
关键词
D O I
10.1063/1.1603960
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the importance of accurate full zone fits for the band diagrams of constituent materials in the superlattice empirical pseudopotential method (SEPM) modeling of InAs/GaSb type-II strained superlattices. In particular, we show that inaccurate fits to X-valley energies in the constituent GaSb conduction band can lead to significant errors in the prediction of the primary band gaps of these superlattices. Specifically, we examine a set of five samples, each with a fixed InAs layer thickness of six monolayers. These samples show a strong blueshift of the band gap as the GaSb layer thickness is systematically increased. We demonstrate that the superlattice-induced band folding of the GaSb conduction band X valley significantly influences our theoretically predicted results for the shorter-period superlattice samples. This result helps shed light on the proper domain of application of heterostructure theories, such as effective mass theories, that only involve zone center properties of the constituent materials. (C) 2003 American Institute of Physics.
引用
收藏
页码:4705 / 4707
页数:3
相关论文
共 50 条
  • [1] Curvature of band overlap in InAs/GaSb Type II superlattices
    Ekpunobi, AJ
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (04) : 463 - 466
  • [2] THE STRUCTURE OF INAS/GASB SUPERLATTICES
    DECOOMAN, BC
    CARTER, CB
    WICKS, GW
    TANOUE, T
    EASTMAN, LF
    [J]. THIN SOLID FILMS, 1989, 170 (01) : 49 - 62
  • [3] Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices
    Magri, R
    Wang, LW
    Zunger, A
    Vurgaftman, I
    Meyer, JR
    [J]. PHYSICAL REVIEW B, 2000, 61 (15) : 10235 - 10241
  • [4] The influence of GaSb layer thickness on the band gap of InAs/GaSb type-II superlattices for mid-infrared detection
    Haugan, HJ
    Szmulowicz, F
    Brown, GJ
    [J]. PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 71 - 76
  • [5] INFLUENCE OF INTERFACE AND BUFFER LAYER ON THE STRUCTURE OF INAS/GASB SUPERLATTICES
    TWIGG, ME
    BENNETT, BR
    SHANABROOK, BV
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1609 - 1611
  • [6] Interfacial disorder in InAs/GaSb superlattices
    Twigg, ME
    Bennett, BR
    Thibado, PM
    Shanabrook, BV
    Whitman, LJ
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (01): : 7 - 30
  • [7] PHONON CONFINEMENT IN INAS/GASB SUPERLATTICES
    BERDEKAS, D
    KANELLIS, G
    [J]. PHYSICAL REVIEW B, 1991, 43 (12): : 9976 - 9979
  • [8] INTERFACIAL ROUGHNESS IN INAS GASB SUPERLATTICES
    TWIGG, ME
    BENNETT, BR
    SHANABROOK, BV
    WATERMAN, JR
    DAVIS, JL
    WAGNER, RJ
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (25) : 3476 - 3478
  • [9] Terahertz band-gap in InAs/GaSb type-II superlattices
    Li, L. L.
    Xu, W.
    Zeng, Z.
    Wright, A. R.
    Zhang, C.
    Zhang, J.
    Shi, Y. L.
    Lu, T. C.
    [J]. MICROELECTRONICS JOURNAL, 2009, 40 (4-5) : 812 - 814
  • [10] Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices
    Aslan, Bulent
    Korkmaz, Melih
    [J]. APPLIED SURFACE SCIENCE, 2016, 362 : 244 - 249