Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field

被引：1
|
作者：
De Meester, R.H.J. [1 ]
Peeters, F.M. [1 ]
Lakrimi, M. [2 ]
Nicholas, R.J. [2 ]
Poulter, A.J.L. [2 ]
Mason, N.J. [2 ]
Walker, P.J. [2 ]
机构：
[1] Departement Natuurkunde, Universiteit Antwerpen (UIA), B-2610 Antwerpen, Belgium
[2] Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
来源：
Physica E: Low-Dimensional Systems and Nanostructures | 2000年 / 7卷 / 01期
关键词：
Band structure - Electron cyclotron resonance - Electron transitions - Magnetic field effects - Mathematical models - Semiconducting gallium compounds - Semiconducting indium compounds - Semiconductor quantum wells;
D O I：
10.1016/S1386-9477(99)00318-5
中图分类号：
学科分类号：
摘要：
We present a theoretical study of intersubband transitions (IST) in InAs/GaSb superlattices in the presence of a parallel magnetic field. Starting from a model describing a single electron in a single quantum well and extending it to include many-body effects and the non-parabolicity of the InAs conduction band we are able to explain the recent cyclotron resonance experiments on narrow and wide InAs/GaSb quantum wells.
引用
下载
收藏
页码：93 / 96
相关论文
共 50 条
  • [21] Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices
    Rygala, M.
    Ryczko, K.
    Smolka, T.
    Kujawa, D.
    Martyniuk, P.
    Ronningen, T. J.
    Krishna, S.
    Motyka, M.
    PHYSICAL REVIEW B, 2021, 104 (08)
  • [22] Interfacial disorder in InAs/GaSb superlattices
    Twigg, ME
    Bennett, BR
    Thibado, PM
    Shanabrook, BV
    Whitman, LJ
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (01): : 7 - 30
  • [23] Interfacial roughness in InAs/GaSb superlattices
    1600, American Inst of Physics, Woodbury, NY, USA (64):
  • [24] PHONON CONFINEMENT IN INAS/GASB SUPERLATTICES
    BERDEKAS, D
    KANELLIS, G
    PHYSICAL REVIEW B, 1991, 43 (12): : 9976 - 9979
  • [25] INTERFACIAL ROUGHNESS IN INAS GASB SUPERLATTICES
    TWIGG, ME
    BENNETT, BR
    SHANABROOK, BV
    WATERMAN, JR
    DAVIS, JL
    WAGNER, RJ
    APPLIED PHYSICS LETTERS, 1994, 64 (25) : 3476 - 3478
  • [26] AN EXPERIMENTAL AND THEORETICAL-STUDY OF INTERSUBBAND TRANSITIONS IN INSB AND INAS ASYMMETRIC DOPING SUPERLATTICES
    VAGHJIANI, HL
    PHILLIPS, CC
    JOHNSON, EA
    STRADLING, RA
    KANE, MJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) : 1103 - 1107
  • [27] INTERSUBBAND L-VALLEY AND HEAVY-HOLE TRANSITIONS IN UNDOPED GASB/ALSB SUPERLATTICES
    ABRAMOVICH, Y
    POPLAWSKI, J
    EHRENFREUND, E
    GERSHONI, D
    BRAR, B
    KROEMER, H
    PHYSICAL REVIEW B, 1994, 50 (12): : 8922 - 8925
  • [28] Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices
    Murawski, K.
    Grodecki, K.
    Henig, A.
    Michalczewski, K.
    Kubiszyn, L.
    Benyahia, D.
    Jankiewicz, B.
    Budner, B.
    Wysmolek, A.
    Martyniuk, P.
    12TH CONFERENCE ON INTEGRATED OPTICS: SENSORS, SENSING STRUCTURES, AND METHODS, 2017, 10455
  • [29] Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
    Prevot, I
    Vinter, B
    Julien, FH
    Fossard, F
    Marcadet, X
    PHYSICAL REVIEW B, 2001, 64 (19)
  • [30] The role of InAs thickness on the material properties of InAs/GaSb superlattices
    Haugan, H. J.
    Brown, G. J.
    Szmulowicz, F.
    Elhamri, S.
    Olson, B. V.
    Boggess, T. F.
    Grazulis, L.
    INFRARED REMOTE SENSING AND INSTRUMENTATION XIX, 2011, 8154
12345