On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells

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作者：
Manor, R. [1 ]
Brafman, O. [1 ]
Bean, J.C. [1 ]
机构：
[1] Technion, Haifa, Israel
来源：
Applied Surface Science | 1996年 / 102卷
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页码：217 / 220
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