Phonon confinement and plasmon-phonon interaction in nanowire-based quantum wells

被引:17
|
作者
Ketterer, Bernt [1 ]
Arbiol, Jordi [2 ,3 ]
Fontcuberta i Morral, Anna [1 ,4 ,5 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Mat Semiconduct, Inst Mat, CH-1015 Lausanne, Switzerland
[2] ICMAB CSIC, ICREA, ES-08193 Bellaterra, Cat, Spain
[3] ICMAB CSIC, Inst Ciencia Mat Barcelona, ES-08193 Bellaterra, Cat, Spain
[4] Tech Univ Munich, Walter Schottky Inst, DE-85748 Garching, Germany
[5] Tech Univ Munich, Dept Phys, DE-85748 Garching, Germany
关键词
RAMAN-SCATTERING; OPTICAL PHONONS; HETEROSTRUCTURES; GAAS; LASER; EXCITATIONS; GAP;
D O I
10.1103/PhysRevB.83.245327
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resonant Raman spectroscopy is realized on closely spaced nanowire-based quantum wells. Phonon quantization consistent with 2.4-nm-thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photoluminescence experiments. The creation of a high-density plasma within the quantized structures is demonstrated by the observation of coupled plasmon-phonon modes. The density of the plasma and thereby the plasmon-phonon interaction is controlled with the excitation power. This work represents a base for further studies on confined high-density charge systems in nanowires.
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页数:6
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