Normal-incident Si0.7Ge0.3/Si multiple quantum wells photodetectors

被引：0
|
作者：
Li, Cheng [1 ]
Yang, Qinqing [1 ]
Wang, Hongjie [1 ]
Luo, Liping [1 ]
Cheng, Buwen [1 ]
Yu, Jinzhong [1 ]
Wang, Qiming [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 05期
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学科分类号：
摘要：
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页码：480 / 482
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