Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation

被引：0
|
作者：
Universidade de Sao Paulo, Sao Paulo, Brazil [1 ]
机构：
来源：
Journal of Solid-State Devices and Circuits | 1997年 / 5卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
收藏
页码：1 / 4
相关论文
共 50 条
  • [31] An analytical physical model for short-channel MOSFETs
    Yang, MH
    Yu, Q
    Xiao, B
    Xie, XF
    Yang, PF
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (08) : 715 - 720
  • [32] A SIMPLE 2-DIMENSIONAL MODEL FOR SUBTHRESHOLD CHANNEL-LENGTH MODULATION IN SHORT-CHANNEL MOSFETS
    GREEN, KR
    FOSSUM, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1560 - 1563
  • [33] Equivalent Length Concept for Compact Modeling of Short-Channel GAA and DG MOSFETs
    Yilmaz, Kerim
    Darbandy, Ghader
    Iniguez, Benjam
    Lime, Francois
    Kloes, Alexander
    2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
  • [34] Modeling of saturation transconductance for short-channel MOSFETs
    Wong, H
    Man, KF
    Poon, MC
    SOLID-STATE ELECTRONICS, 1996, 39 (09) : 1401 - 1404
  • [35] Analog parameters of short-channel SOI MOSFETs
    Colinge, JP
    Cao, M
    Greene, W
    1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 88 - 89
  • [36] Short-channel modeling of bulk accumulation MOSFETs
    Murali, R
    Austin, BL
    Wang, LH
    Meindl, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) : 940 - 947
  • [37] A SIMPLE PUNCHTHROUGH MODEL FOR SHORT-CHANNEL MOSFETS
    HSU, FC
    MULLER, RS
    HU, CM
    KO, PK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1354 - 1359
  • [38] Unusual Short-Channel Effects in SOI MOSFETs
    Navarro, C.
    Bawedin, M.
    Andrieu, F.
    Sagnes, B.
    Cristoloveanu, S.
    2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4), 2013, 54 (01): : 197 - 202
  • [39] On the reverse short-channel effects of submicron MOSFETs
    Narayanan, R
    Latif, Z
    OrtizConde, A
    Liou, JJ
    Golovanova, L
    Wong, W
    Sanchez, FJG
    SOUTHCON/96 - CONFERENCE RECORD, 1996, : 345 - 349
  • [40] Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
    Karatsori, T. A.
    Theodorou, C. G.
    Haendler, S.
    Planes, N.
    Ghibaud, G.
    Dimitriadis, C. A.
    2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 163 - 164
12345