Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation

被引：0
|
作者：
Universidade de Sao Paulo, Sao Paulo, Brazil [1 ]
机构：
来源：
Journal of Solid-State Devices and Circuits | 1997年 / 5卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
收藏
页码：1 / 4
相关论文
共 50 条
  • [41] SHORT-CHANNEL THRESHOLD-MODEL FOR BURIED-CHANNEL MOSFETS
    HUANG, JST
    SCHRANKLER, JW
    KUENG, JS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1888 - 1895
  • [42] Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method
    Kim, Junsoo
    Lee, Jaehong
    Song, Ickhyun
    Yun, Yeonam
    Lee, Jong Duk
    Park, Byung-Gook
    Shin, Hyungcheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (10) : 2779 - 2784
  • [43] Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs
    Latif, Z
    OrtizConde, A
    Liou, JJ
    Sanchez, FJG
    Wong, W
    1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1996, : 91 - 93
  • [44] On the extraction of the effective channel length of MOSFETs
    Latif, Z
    OrtizConde, A
    Liou, JJ
    Sanchez, FJG
    1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 281 - 284
  • [45] Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction
    Chu, Tao
    Vega, Reinaldo A.
    Alptekin, Emre
    Guo, Dechao
    Shang, Huiling
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (06)
  • [46] 2-DIMENSIONAL NUMERICAL-ANALYSIS FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS
    NARAYANAN, R
    ORTIZCONDE, A
    LIOU, JJ
    SANCHEZ, FJG
    PARTHASARATHY, A
    SOLID-STATE ELECTRONICS, 1995, 38 (06) : 1155 - 1159
  • [47] ANALYSIS OF SHORT-CHANNEL MOSFETS WITH FIELD-DEPENDENT CARRIER-DRIFT MOBILITY
    FUKUMA, M
    OKUTO, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2109 - 2114
  • [48] Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations
    Zhou, Yan
    Wang, Mingxiang
    Wong, Man
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 901 - 903
  • [49] Current and capacitance modeling of short-channel DG MOSFETs
    Borli, H.
    Kolberg, S.
    Fjeldly, T. A.
    Iniguez, B.
    2008 7TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS, 2008, : 34 - +
  • [50] QUANTUM CORRECTIONS TO THE THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSFETS
    KUIVALAINEN, P
    PHYSICA SCRIPTA, 1994, 54 : 154 - 156
12345