Experimental results of the stochastic coulomb interaction in ion projection lithography

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B Microelectron Nanometer Struct | / 3098-3106期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Experimental results of the stochastic Coulomb interaction in ion projection lithography
    de Jager, PWH
    Derksen, G
    Mertens, B
    Cekan, E
    Lammer, G
    Vonach, H
    Buschbeck, H
    Zeininger, M
    Horner, C
    Löschner, H
    Stengl, G
    Bleeker, AJ
    Benschop, J
    Shi, F
    Volland, B
    Hudek, P
    Heerlein, H
    Rangelow, IW
    Kaesmaier, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3098 - 3106
  • [2] Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in projection beam lithography
    de Jager, P.W.H., 1600, Elsevier Science Publishers B.V., Amsterdam, Netherlands (53):
  • [3] Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in projection beam lithography
    de Jager, PWH
    Mertens, B
    Munro, E
    Cekan, E
    Lammer, G
    Vonach, H
    Buschbeck, H
    Zeininger, M
    Horner, C
    Löschner, H
    Stengl, G
    Bleeker, AJ
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 617 - 620
  • [4] Coulomb interaction effect in cell projection lithography
    Yamashita, H
    Tamura, T
    Nomura, E
    Nozue, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6684 - 6688
  • [5] Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover
    Kruit, P
    Barth, JE
    Lammer, G
    Chalupka, A
    Vonach, H
    Loschner, H
    Stengl, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2369 - 2372
  • [6] Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (06):
  • [7] Experimental investigation of the Coulomb effect in electron projection lithography (EPL)
    Yamamoto, J
    Murai, F
    Moniwa, A
    EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 : 807 - 817
  • [8] Stochastic Coulomb interaction effect in ion-neutralized electron-beam projection optics
    Takahashi, K
    Han, LQ
    Pease, RF
    Meisburger, WD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2572 - 2580
  • [9] Coulomb effect in cell projection lithography
    Sohda, Y
    Someda, Y
    Saitou, N
    Itoh, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2419 - 2423
  • [10] EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS
    HAMMEL, E
    CHALUPKA, A
    FEGERL, J
    FISCHER, R
    LAMMER, G
    LOSCHNER, H
    MALEK, L
    NOWAK, R
    STENGL, G
    VONACH, H
    WOLF, P
    BRUNGER, WH
    BUCHMANN, LM
    TORKLER, M
    CEKAN, E
    FALLMANN, W
    PASCHKE, F
    STANGL, G
    THALINGER, F
    BERRY, IL
    HARRIOTT, LR
    FINKELSTEIN, W
    HILL, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3533 - 3538
12345