EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS

被引：17
|
作者：
HAMMEL, E
CHALUPKA, A
FEGERL, J
FISCHER, R
LAMMER, G
LOSCHNER, H
MALEK, L
NOWAK, R
STENGL, G
VONACH, H
WOLF, P
BRUNGER, WH
BUCHMANN, LM
TORKLER, M
CEKAN, E
FALLMANN, W
PASCHKE, F
STANGL, G
THALINGER, F
BERRY, IL
HARRIOTT, LR
FINKELSTEIN, W
HILL, RW
机构：
[1] FRAUNHOFER INST SILICON TECHNOL,D-14199 BERLIN,GERMANY
[2] VIENNA TECH UNIV,SOC ADVANCEMENTS MICROELECTR AUSTRIA,VIENNA,AUSTRIA
[3] DEPT DEF,MICROELECTR RES LAB,COLUMBIA,MD 21045
[4] AT&T BELL LABS,MURRAY HILL,NJ 07974
[5] ADV LITHOG GRP,COLUMBIA,MD 21045
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词：
D O I：
10.1116/1.587465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3533 / 3538
页数：6
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