共 50 条
- [41] Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasmas for lead zirconate titanate etching JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1373 - 1376
- [44] GaN etching in BCl3/Cl2 plasmas WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 487 - 493
- [46] Semiempirical profile simulation of aluminum etching in Cl2/BCl3 plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (05): : 1536 - 1556
- [47] High-density inductively coupled plasma etching of GaAs/AlGaAs in BCl3/Cl2/Ar:: A study using a mixture design experiment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 511 - 514
- [48] Ion energy distribution functions in inductively coupled radio-frequency discharges -: Mixtures of Cl2/BCl3/Ar JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (06): : 3389 - 3395