共 50 条
- [1] The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 201 - 204
- [2] GaN etching in BCl3/Cl2 plasmas WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 487 - 493
- [3] Semiempirical profile simulation of aluminum etching in Cl2/BCl3 plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (05): : 1536 - 1556
- [5] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar Journal of Materials Science: Materials in Electronics, 2012, 23 : 1224 - 1228
- [6] Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04): : 1390 - 1394
- [7] Simulations of BCl3/Cl2 plasma in an inductively coupled gaseous reference cell JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1873 - 1879
- [8] Simulations of BCl3/Cl2 plasma in an inductively coupled gaseous reference cell Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
- [10] Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (06): : 1915 - 1922