共 50 条
- [31] Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (02):
- [32] Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A): : L257 - L259
- [33] Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (3 A):
- [34] Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (02): : 407 - 412
- [35] High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 50 - 52
- [36] Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl2/BCl3/CH4 plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (12): : 8304 - 8307
- [37] Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (03):
- [38] Simulations of BCl3/Cl2/Ar plasmas with comparisons to diagnostic data JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (04): : 2227 - 2239