ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR BEAM EPITAXY.

被引：0

作者：

Nishikawa, Yasumi ^{[1
]}

Kanamoto, Kyozo ^{[1
]}

Tokuda, Yasunori ^{[1
]}

Fujiwara, Kenzo ^{[1
]}

Nakayama, Takashi ^{[1
]}

机构：

[1] Mitsubishi Electric Corp, Amagasaki, Jpn, Mitsubishi Electric Corp, Amagasaki, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1986年 / 25卷 / 06期

关键词：

MOLECULAR BEAM EPITAXY - SURFACES - Contamination;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Surface imperfections, such as so-called oval defects, have been observed in GaAs layers grown by molecular-beam epitaxy (MBE). The authors have investigated one particular type of oval defects which has a macroscopic nucleus at the center. By careful cross-sectional observations using scanning electron microscopy (SEM) and a Nomarski optical microscope, they found a clear, convincing, independent evidence that the origin of this type defect is macroscopic surface contamination prior to MBE growth.

引用

页码：908 / 909

共 50 条

[41] Properties of Ga1-xMnxN epilayers grown by molecular beam epitaxy
Marcet, S
Bellet, E
Biquard, X
Bougerol, C
Cibert, J
Ferrand, D
Giraud, R
Halley, D
Kulatov, E
Kuroda, S
Mariette, H
Titov, A
Physics of Semiconductors, Pts A and B, 2005, 772 : 365 - 366
[42] PROPERTIES AND APPLICATIONS OF CDTE SAPPHIRE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
MYERS, TH
GILESTAYLOR, NC
YANKA, RW
BICKNELL, RN
COOK, JW
SCHETZINA, JF
JOST, SR
COLE, HS
WOODBURY, HH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 71 - 75
[43] Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy
X.J. Wang
C. Fulk
F.H. Zhao
D.H. Li
S. Mukherjee
Y. Chang
R. Sporken
R. Klie
Z. Shi
C.H. Grein
S. Sivananthan
Journal of Electronic Materials, 2008, 37 : 1200 - 1204
[44] Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy
Chen, S
He, XZ
Lin, L
DETECTORS, FOCAL PLANE ARRAYS, AND APPLICATIONS, 1996, 2894 : 224 - 229
[45] COMPOSITION CHARACTERIZATION METHODS FOR HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
ODA, N
KANNO, T
SAGA, M
OIKAWA, R
MAEJIMA, Y
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 193 - 196
[46] Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy
Luo, M
Vanmil, BL
Tompkins, RP
Cui, Y
Mounts, T
Roy, UN
Burger, A
Myers, TH
Giles, NC
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) : 737 - 741
[47] Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy
Jiangang Ma
Donghui Li
Gang Bi
Fanghai Zhao
Shelly Elizondo
Shaibal Mukherjee
Zhisheng Shi
Journal of Electronic Materials, 2009, 38 : 325 - 329
[48] TRANSPORT-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
KALEM, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S200 - S203
[49] STUDY OF CDTE(111)B EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
MONFROY, G
SIVANANTHAN, S
FAURIE, JP
RENO, JL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 326 - 330
[50] Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy
Dimakis, E.
Domagala, J.
Iliopoulos, E.
Adikimenakis, A.
Georgakilas, A.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06): : 1996 - 1999

← 1 2 3 4 5 →