ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR BEAM EPITAXY.

被引：0

作者：

Nishikawa, Yasumi ^{[1
]}

Kanamoto, Kyozo ^{[1
]}

Tokuda, Yasunori ^{[1
]}

Fujiwara, Kenzo ^{[1
]}

Nakayama, Takashi ^{[1
]}

机构：

[1] Mitsubishi Electric Corp, Amagasaki, Jpn, Mitsubishi Electric Corp, Amagasaki, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1986年 / 25卷 / 06期

关键词：

MOLECULAR BEAM EPITAXY - SURFACES - Contamination;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Surface imperfections, such as so-called oval defects, have been observed in GaAs layers grown by molecular-beam epitaxy (MBE). The authors have investigated one particular type of oval defects which has a macroscopic nucleus at the center. By careful cross-sectional observations using scanning electron microscopy (SEM) and a Nomarski optical microscope, they found a clear, convincing, independent evidence that the origin of this type defect is macroscopic surface contamination prior to MBE growth.

引用

页码：908 / 909

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