Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

被引：2
|
作者：
Dimakis, E.
Domagala, J.
Iliopoulos, E.
Adikimenakis, A.
Georgakilas, A.
机构：
[1] FORTH IESL, Iraklion 71110, Greece
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 06期
关键词：
D O I：
10.1002/pssa.200674890
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The in-plane lattice parameters of InN, GaN and Al2O3 in a InN/GaN/Al2O3(0001) heterostructure have been measured as a function of temperature in the range of 25-350 degrees C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al2O3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al2O3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
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页码：1996 / 1999
页数：4
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