Microscopy of SiC layers grown by C60 deposition on Si(100)

被引:0
|
作者
Max-Planck-Inst fuer, Mikrostrukturphysik, Halle/Saale, Germany [1 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Angular distribution of C60 and C70 scattered from SiO2, SiC, and Si(100)
    Hamza, AV
    Balooch, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1997, 58 (11) : 1973 - 1978
  • [22] The bonding sites and structure of C60 on the Si(100) surface
    Godwin, PD
    Kenny, SD
    Smith, R
    SURFACE SCIENCE, 2003, 529 (1-2) : 237 - 246
  • [23] Direct evidence of C60 chemical bonding on Si(100)
    De Seta, M
    Sanvitto, D
    Evangelisti, F
    PHYSICAL REVIEW B, 1999, 59 (15): : 9878 - 9881
  • [24] Adsorption and transformation of C60 molecules at the (100) Si surface
    N. R. Gall
    E. V. Rut’kov
    A. Ya. Tontegode
    Semiconductors, 2002, 36 : 1008 - 1012
  • [25] Adsorption and transformation of C60 molecules at the (100) Si surface
    Gall, NR
    Rut'kov, EV
    Tontegode, AY
    SEMICONDUCTORS, 2002, 36 (09) : 1008 - 1012
  • [26] C60 on SiC nanomesh
    Chen, Wei
    Zhang, Hong Liang
    Xu, Hai
    Tok, Eng Soon
    Loh, Kian Ping
    Wee, Andrew Thye Shen
    JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (43): : 21873 - 21881
  • [27] Surface phases of SiC islands grown over Si(111)-(7×7) using C60 as a precursor
    Universidad Autonoma de Madrid, Madrid, Spain
    Surf Sci, 1-3 (L267-L272):
  • [28] NITROGEN IMPLANTATION IN (100)-BETA-SIC LAYERS GROWN ON SI SUBSTRATE
    HIRANO, Y
    INADA, T
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1020 - 1028
  • [29] ION-IMPLANTATION IN BETA-SIC LAYERS GROWN ON (100)SI
    HIRANO, Y
    INADA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (12) : 3489 - 3494
  • [30] SiC film growth on Si(111) by supersonic beams of C60
    R. Verucchi
    L. Aversa
    G. Ciullo
    A. Podestà
    P. Milani
    S. Iannotta
    The European Physical Journal B - Condensed Matter and Complex Systems, 2002, 26 : 509 - 514