ION-IMPLANTATION IN BETA-SIC LAYERS GROWN ON (100)SI

N-2(+) and As+ ions have been implanted in beta-SiC/Si wafers to form n-type layers in the substrates. Postimplant annealing is carried out at a temperature in the range of 400 to 1200 degrees C. The crystalline properties for implanted beta-SiC layers have been examined by an electron diffraction method and also by Rutherford backscattering spectroscopy. The electrical properties of n-type layers formed in the SiC have been evaluated by Hall-effect measurements. The experimental results obtained from the present work show that the recrystallization of the implantation-induced amorphous layer and the electrical activation of implanted atoms are initiated by annealing at 800 degrees C. It is also shown that hot implantation is more effective for achieving the high electrical activation of implanted atoms as compared with room temperature implantation. A highly doped n-type beta-SiC layer with a sheet resistivity of 5.3 x,10(2) Omega/square can be formed by N-implantation at 400 degrees C and by subsequent annealing at 1200 degrees C.