Microscopy of SiC layers grown by C60 deposition on Si(100)

被引:0
|
作者
Max-Planck-Inst fuer, Mikrostrukturphysik, Halle/Saale, Germany [1 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] SiC film growth on Si(111) by supersonic beams of C60
    Verucchi, R
    Aversa, L
    Ciullo, G
    Podestà, A
    Milani, P
    Iannotta, S
    EUROPEAN PHYSICAL JOURNAL B, 2002, 26 (04): : 509 - 514
  • [32] Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
    Khazaka, Rami
    Portail, Marc
    Vennegues, Philippe
    Alquier, Daniel
    Michaud, Jean Francois
    ACTA MATERIALIA, 2015, 98 : 336 - 342
  • [33] The bonding nature of individual C60 molecules to Si(100) surfaces
    Yao, X
    Workman, RK
    Peterson, CA
    Chen, D
    Sarid, D
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S107 - S111
  • [34] Growth of thin C60 films on hydrogenated Si(100) surfaces
    Sanvitto, D
    De Seta, M
    Evangelisti, F
    SURFACE SCIENCE, 2000, 452 (1-3) : 191 - 197
  • [35] The bonding nature of individual C60 molecules to Si(100) surfaces
    X. Yao
    R.K. Workman
    C.A. Peterson
    D. Chen
    D. Sarid
    Applied Physics A, 1998, 66 : S107 - S111
  • [36] Mechanistic study and characterization of 3C-SiC(100) grown on Si(100)
    Kim, KC
    Park, CI
    Roh, JI
    Nahm, KS
    Hahn, YB
    Lee, YS
    Lim, KY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) : C383 - C389
  • [37] Electronic structure of C60, CuPc, and C60/CuPc nanoparticles and their layers
    Lysko, I
    Gorchinskiy, A
    Buzaneva, E
    Tsamis, C
    Nassiopoulou, AG
    Scharff, P
    Carta-Abelmann, L
    Risch, K
    FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, 2005, 13 (03) : 259 - 272
  • [38] Synthesis of SiC on Si(111) at moderate temperatures by supersonic C60 beams
    Aversa, L
    Verucchi, R
    Ciullo, G
    Ferrari, L
    Moras, P
    Pedio, M
    Pesci, A
    Iannotta, S
    APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 350 - 355
  • [39] Formation of SiC Nanostructures on Si Surface using C60 by Spinning Technique
    Mondal, Aniruddha
    Jadav, Nilesh
    Das, Utpal
    2ND NATIONAL WORKSHOP ON ADVANCED OPTOELECTRONIC MATERIALS AND DEVICES (AOMD-2008), 2008, : 28 - +
  • [40] SURFACE-MORPHOLOGY OF CUBIC SIC(100) GROWN ON SI(100) BY CHEMICAL VAPOR-DEPOSITION
    SHIBAHARA, K
    NISHINO, S
    MATSUNAMI, H
    JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 538 - 544