共 50 条
- [41] Screening influence on the binding energies of excitons in quantum wells under pressure PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 273 - +
- [42] Binding energies of excitons in GaAs/AlAs quantum wells under pressure MODERN PHYSICS LETTERS B, 2003, 17 (16): : 863 - 870
- [44] BINDING-ENERGIES OF EXCITONS IN SEMICONDUCTOR QUANTUM WELLS - QUANTUM SUBBAND INTERFERENCE EFFECT PHYSICAL REVIEW B, 1989, 39 (17): : 12944 - 12947
- [49] VARIATIONAL-METHODS FOR CALCULATING EXCITON BINDING-ENERGIES IN QUANTUM-WELL STRUCTURES JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1992, 25 (08): : 2395 - 2401
- [50] Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction Physica Status Solidi (A) Applied Research, 2000, 180 (01): : 321 - 325