Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction

被引：0

作者：

Chichibu, S.F. ^{[1
]}

Setoguchi, A. ^{[1
,7
]}

Azuhata, T. ^{[2
]}

Müllhäuser, J. ^{[3
]}

Sugiyama, M. ^{[1
,7
]}

Mizutani, T. ^{[1
,7
]}

Deguchi, T. ^{[4
]}

Nakanishi, H. ^{[5
]}

Sota, T. ^{[4
]}

Brandt, O. ^{[3
]}

Ploog, K.H. ^{[3
]}

Mukai, T. ^{[6
]}

Nakamura, S. ^{[6
,8
]}

机构：

[1] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

[2] Dept. of Mat. Science and Technology, Hirosaki University, 3 Bunkyo-cho, Aomori 036-8561, Japan

[3] Paul-Drude-Inst. F., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

[4] Dept. Elec., Electronics, Comp. Eng., Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

[5] Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

[6] Dept. of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaku, Anan, Tokushima 774-8601, Japan

[7] Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

[8] Department of Materials Engineering, University of California, Santa Barbara, CA 93106, United States

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期

关键词：

Compendex;

D O I：

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学科分类号：

摘要：

Absorption spectroscopy - Dislocations (crystals) - Electroluminescence - Excitons - Fermi level - Light emission - Light emitting diodes - Piezoelectricity - Semiconducting indium compounds

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页码：321 / 325

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[1] Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction
Chichibui, SF
Setoguchi, A
Azuhata, T
Müllhäuser, J
Sugiyama, M
Mizutani, T
Deguchi, T
Nakanishi, H
Sota, T
Brandt, O
Ploog, KH
Mukai, T
Nakamura, S
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