Binding energies of excitons in GaAs/AlAs quantum wells under pressure

被引：15
|
作者：
Zhao, GJ
Liang, XX
Ban, SL
机构：
[1] CCAST, World Lab, Beijing 100080, Peoples R China
[2] Inner Mongolia Univ, Coll Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2003年 / 17卷 / 16期
关键词：
exciton; binding energy; quantum well; pressure effect;
D O I：
10.1142/S0217984903005329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The binding energy of an exciton in the GaAs/AlAs quantum well is discussed including the influence of interface optical phonons and bulk longitudinal optical phonons confined in the well under hydrostatic pressure. The dependence of the phonon energies on pressure is considered using a linear interpolation method to obtain the pressure effect on the exciton binding energy by a variational calculation. The result shows that the polaronic effect on the exciton binding energies cannot be neglected and the pressure effect on the exciton-phonon interaction is obvious.
引用
收藏
页码：863 / 870
页数：8
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