THERMAL EFFECTS IN n-CHANNEL ENHANCEMENT MOSFET'S OPERATED AT CRYOGENIC TEMPERATURES.

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作者：
Foty, Daniel P. [1 ]
Titcomb, Stephen L. [1 ]
机构：
[1] Univ of Vermont, Burlington, VT, USA, Univ of Vermont, Burlington, VT, USA
来源：
| 1600年 / ED-34期
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摘要：
SEMICONDUCTOR DEVICES, MOSFET
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