共 50 条
- [31] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
- [32] Threshold current density of GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy Miyazawa, Sei-ichi, 1600, (30):
- [33] ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR BEAM EPITAXY. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (06): : 908 - 909
- [34] Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY. Fujitsu Scientific and Technical Journal, 1979, 15 (04): : 121 - 130
- [40] GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1553 - L1555