QUANTUM WELL INJECTION LASERS GROWN BY MOLECULAR BEAM EPITAXY.

被引:0
|
作者
Woodbridge, K.
Blood, P.
Fletcher, E.D.
Hulyer, P.J.
机构
来源
Annual Review - Philips Research Laboratories | 1983年
关键词
MOLECULAR BEAMS - Applications;
D O I
暂无
中图分类号
学科分类号
摘要
MBE is a refined form of vacuum evaporation in which molecular beams of the constituent elements produced from effusion cells impinge upon a heated substrate to produce the required epitaxial layer. The UHV system used in this work is fitted with a sample interlock for substrate transfer and extensive cryopanelling to reduce background gas species. The system has been fully automated with computer control of cell temperatures and shutter operations enabling pre-programming of complex multilayer structures.
引用
收藏
页码:50 / 51
相关论文
共 50 条
  • [31] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    HOLONYAK, N
    DRUMMOND, TJ
    CAMRAS, MD
    FISCHER, R
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
  • [33] ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR BEAM EPITAXY.
    Nishikawa, Yasumi
    Kanamoto, Kyozo
    Tokuda, Yasunori
    Fujiwara, Kenzo
    Nakayama, Takashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (06): : 908 - 909
  • [34] Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.
    Fujii, Toshio
    Suzuki, Hidetake
    Hiyamizu, Satoshi
    Fujitsu Scientific and Technical Journal, 1979, 15 (04): : 121 - 130
  • [35] Quantum dot lasers grown by gas source molecular-beam epitaxy
    Gong, Q.
    Chen, P.
    Li, S. G.
    Lao, Y. F.
    Cao, C. F.
    Xu, C. F.
    Zhang, Y. G.
    Feng, S. L.
    Ma, C. H.
    Wang, H. L.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 450 - 453
  • [36] InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
    Hooper, SE
    Kauer, M
    Bousquet, V
    Johnson, K
    Barnes, JM
    Heffernan, J
    ELECTRONICS LETTERS, 2004, 40 (01) : 33 - 34
  • [37] LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHYI, JI
    GAU, JH
    SHIEH, JL
    PAN, JW
    CHAN, YJ
    HONG, JW
    HUANG, MF
    SOLID-STATE ELECTRONICS, 1995, 38 (05) : 1105 - 1106
  • [38] High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy
    Toivonen, M
    Savolainen, P
    Pessa, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (12) : 1923 - 1926
  • [39] THRESHOLD CURRENT REDUCTION IN PATTERNED QUANTUM-WELL SEMICONDUCTOR-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    KAPON, E
    SIMHONY, S
    HARBISON, JP
    FLOREZ, LT
    WORLAND, P
    APPLIED PHYSICS LETTERS, 1990, 56 (19) : 1825 - 1827
  • [40] GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS
    HAYAKAWA, T
    TAKAHASHI, K
    HOSODA, M
    YAMAMOTO, S
    HIJIKATA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1553 - L1555