GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS

被引:47
|
作者
HAYAKAWA, T
TAKAHASHI, K
HOSODA, M
YAMAMOTO, S
HIJIKATA, T
机构
关键词
D O I
10.1143/JJAP.27.L1553
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L1553 / L1555
页数:3
相关论文
共 50 条
  • [1] GAINP AND ALINP GROWN BY ELEMENTAL SOURCE MOLECULAR-BEAM EPITAXY
    VARRIANO, JA
    KOCH, MW
    JOHNSON, FG
    WICKS, GW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (02) : 195 - 198
  • [2] 600-NM-RANGE GAINP/ALINP STRAINED-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    NOMURA, I
    KISHINO, K
    KIKUCHI, A
    KANEKO, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 804 - 810
  • [3] HIGH-OPTICAL-QUALITY GAINP AND GAINP AIINP DOUBLE HETEROSTRUCTURE LASERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    KIKUCHI, A
    KISHINO, K
    KANEKO, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4557 - 4559
  • [4] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    BLOOD, P
    FLETCHER, ED
    HULYER, PJ
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 16 - 18
  • [5] STUDY OF ALINP AND GAINP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)
    NAKAJIMA, M
    TAKAMORI, A
    YOKOTSUKA, T
    UCHIYAMA, K
    ABE, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 116 - 123
  • [6] AlInP-AlGaInP quantum-well lasers grown by molecular beam epitaxy
    Tukiainen, Antti
    Toikkanen, Lauri
    Haavisto, Matti
    Erojarvi, Vesa
    Rimpilainen, Ville
    Viheriala, Jukka
    Pessa, Markus
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (21-24) : 2257 - 2259
  • [7] HGCDTE DOUBLE HETEROSTRUCTURE DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZUCCA, R
    ZANDIAN, M
    ARIAS, JM
    GIL, RV
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1587 - 1593
  • [8] THE RELIABILITY OF (ALGA)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    TSANG, WT
    HARTMAN, RL
    SCHWARTZ, B
    FRALEY, PE
    HOLBROOK, WR
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 683 - 685
  • [9] GAAS/GAALAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WEIMANN, G
    SCHLAPP, W
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C99 - C99
  • [10] DOUBLE-HETEROSTRUCTURE ALGAAS/GAAS LASERS GROWN ON THE MESAS OF TRENCHED SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    LIU, X
    LEE, HP
    WANG, S
    [J]. ELECTRONICS LETTERS, 1990, 26 (09) : 590 - 592