Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's

被引：0
|
作者：
Department of Physics, University of Hong Kong, Hong Kong, Hong Kong [1 ]
不详 [2 ]
机构：
来源：
IEEE Trans. Instrum. Meas. | / 3卷 / 721-723期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] HYSTERESIS I-V EFFECTS IN SHORT-CHANNEL SILICON MOSFET'S.
    Boudou, Alain
    Doyle, Brian S.
    Electron device letters, 1987, EDL-8 (07): : 300 - 302
  • [22] A four quadrant CMOS analog multiplier based on the non ideal MOSFET I-V characteristics
    Dei, Michele
    Nizza, Nicolo
    Bruschi, Paolo
    Piotto, Massimo
    PRIME: 2008 PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PROCEEDINGS, 2008, : 33 - 36
  • [23] MOSFET stair-shaped I-V circuit and applications
    Jun, S
    Ahn, SJ
    ISCAS '98 - PROCEEDINGS OF THE 1998 INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-6, 1998, : A328 - A330
  • [24] MOSFET stair-shaped I-V circuit and applications
    Jun, S
    Kim, DM
    ELECTRONICS LETTERS, 1997, 33 (24) : 2077 - 2078
  • [25] I-V characteristics of foilless diodes
    Liu, GZ
    Huang, WH
    Yang, ZF
    CHINESE PHYSICS, 2005, 14 (05): : 949 - 952
  • [26] Transmission and I-V characteristics of laterally-confined resonant tunneling structures
    Csontos, D
    Xu, HQ
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 201 - 210
  • [27] Study of dielectric-breakdown-induced dopant redistribution based on MOSFET diode I-V measurement
    Lim, WT
    Lo, VL
    Pey, KL
    Ang, DS
    Tung, CH
    IPFA 2005: PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2005, : 131 - 136
  • [28] Pulse measurement of the I-V characteristics in Bi-2212 intrinsic junctions
    Yasuda, T
    Tonouchi, M
    Takano, S
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 1265 - 1266
  • [29] Two-dimensional doping profile characterization of MOSFET's by inverse modeling using I-V characteristics in the subthreshold region
    Lee, ZK
    McIlrath, MB
    Antoniadis, DA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1640 - 1649
  • [30] III-V MOSFET Structure ( InP/InAs/InGaAs) I-V Characteristics Using Silvaco TCAD Simulator
    Ammi, S.
    Aissat, A.
    Wichmann, N.
    Bollaert, S.
    PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 : 207 - 215
12345