Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

被引：0

作者：

Nishimori, T. ^{[1
]}

Sakamoto, H. ^{[1
]}

Takakuwa, Y. ^{[1
]}

Kono, Sh. ^{[1
]}

机构：

[1] Mitsubishi Heavy Industries, Ltd, Yokohama, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 10 A期

关键词：

Activation energy - Carbon - Desorption - Methane - Molecular beam epitaxy - Substrates - Vapor phase epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.

引用

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