Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

被引：0
|
作者：
Nishimori, T. [1 ]
Sakamoto, H. [1 ]
Takakuwa, Y. [1 ]
Kono, Sh. [1 ]
机构：
[1] Mitsubishi Heavy Industries, Ltd, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 10 A期
关键词：
Activation energy - Carbon - Desorption - Methane - Molecular beam epitaxy - Substrates - Vapor phase epitaxy;
D O I：
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中图分类号：
学科分类号：
摘要：
Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.
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