LOWERING OF THE SMBS THRESHOLD IN III-V SEMICONDUCTORS.

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作者：
Gorbunov, L.M.
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Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva) | 1980年 / 04期
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摘要：
It is shown that in narrow-band semiconductors, the threshold of the stimulated Mandel'shtam-Brillouin scattering (SMBS) can be lowered with the aid of the electroacoustic effects, by passing direct current across the magnetic field.
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页码：25 / 29
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