LOWERING OF THE SMBS THRESHOLD IN III-V SEMICONDUCTORS.

被引：0
|
作者：
Gorbunov, L.M.
机构：
来源：
Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva) | 1980年 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that in narrow-band semiconductors, the threshold of the stimulated Mandel'shtam-Brillouin scattering (SMBS) can be lowered with the aid of the electroacoustic effects, by passing direct current across the magnetic field.
引用
收藏
页码：25 / 29
相关论文
共 50 条
  • [41] COMMON ENERGY REFERENCE FOR DX CENTERS AND EL2 LEVELS IN III-V COMPOUND SEMICONDUCTORS.
    Hasegawa, Hideki
    Ohno, Hideo
    Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (04): : 319 - 322
  • [42] Diffusion from Doping Material Emulsions, a Simple and Low-cost Technique for Doping of III-V Semiconductors.
    Arnold, N.
    Schmitt, R.
    Daembkes, H.
    Heime, K.
    1600,
  • [43] MASKLESS ION IMPLANTATION SYSTEM FOR THREE-DIMENSIONAL FINE DOPING STRUCTURES IN III-V COMPOUND SEMICONDUCTORS.
    Miyauchi, Eizo
    Hashimoto, Hisao
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 104 - 111
  • [44] Making ferromagnetic semiconductors out of III-V nitride semiconductors
    Makino, H
    Kim, JJ
    Chen, PP
    Cho, MW
    Yao, T
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 11 - 16
  • [45] Vacancies and defect levels in III-V semiconductors
    Tahini, H. A.
    Chroneos, A.
    Murphy, S. T.
    Schwingenschloegl, U.
    Grimes, R. W.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
  • [46] Elastic constants of nanoporous III-V semiconductors
    Janovska, Michaela
    Sedlak, Petr
    Kruisova, Alena
    Seiner, Hanus
    Landa, Michal
    Grym, Jan
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (24)
  • [47] INTEGRATED-OPTICS IN III-V SEMICONDUCTORS
    CARENCO, A
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1989, 44 (245): : 129 - 136
  • [48] THEORY OF INTRINSIC DEFECTS IN III-V SEMICONDUCTORS
    REINECKE, TL
    LINCHUNG, PJ
    JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 355 - 358
  • [49] TRANSPORT PHENOMENA IN III-V COMPOUND SEMICONDUCTORS
    MATHUR, PC
    SHYAM, R
    JAIN, S
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 50 (01): : 11 - 40
  • [50] Enhancing hole mobility in III-V semiconductors
    Nainani, Aneesh
    Bennett, Brian R.
    Brad Boos, J.
    Ancona, Mario G.
    Saraswat, Krishna C.
    Journal of Applied Physics, 2012, 111 (10):
12345