共 50 条
- [1] BOND LENGTHS IN III-V TERNARY ALLOY SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12): : 2061 - 2066
- [2] AVERAGE BOND LENGTHS AND ATOM ARRANGEMENT IN In1 - xGaxAs AND GaAs1 - xPx III-V TERNARY ALLOY SEMICONDUCTORS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (08): : 1296 - 1299
- [3] ELECTRON IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS. Applied Physics A: Solids and Surfaces, 1987, A43 (02): : 105 - 109
- [4] PICOSECOND SPECTROSCOPY IN III-V COMPOUNDS AND ALLOY SEMICONDUCTORS. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1986, 146 (1-2): : 286 - 303
- [6] OPTICAL WAVEGUIDES IN III-V SEMICONDUCTORS. Journal of the Institution of Electronic and Radio Engineers, 1987, 57 (01):
- [7] LOWERING OF THE SMBS THRESHOLD IN III-V SEMICONDUCTORS. Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1980, (04): : 25 - 29
- [8] Epitaxial Growth of Metallic Compounds on III-V Semiconductors. Le Vide, les couches minces, 1988, 43 (241): : 187 - 189
- [10] REFRACTIVE INDEX DISPERSION IN IV AND III-V SEMICONDUCTORS. CSELT Technical Reports, 1985, 13 (02): : 121 - 127