共 18 条
- [1] BOND LENGTHS IN III-V TERNARY ALLOY SEMICONDUCTORS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (12): : 2061 - 2066
- [3] AVERAGE BOND LENGTHS AND ATOM ARRANGEMENT IN IN1-XGAX-AS AND GAAS1-XPXIII-V TERNARY ALLOY SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (08): : 1296 - 1299
- [4] BOND LENGTHS IN III-V TERNARY ALLOY SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12): : 2061 - 2066
- [5] ALLOY SCATTERING MOBILITY IN III-V TERNARY ALLOY SEMICONDUCTORS WITH NONRANDOM ATOM ARRANGEMENT JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 776 - 777
- [6] ALLOY SCATTERING MOBILITY IN III-V TERNARY ALLOY SEMICONDUCTORS WITH NONRANDOM ATOM ARRANGEMENT. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (05): : 776 - 777
- [7] SOLUTION HARDENING DUE TO A NONRANDOM ATOM ARRANGEMENT IN III-V TERNARY ALLOY SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L176 - L178
- [8] ATOM ARRANGEMENT IN III-V QUATERNARY ALLOY SEMICONDUCTORS OF (ABC)D TYPE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 642 - 648
- [9] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF BOND LENGTHS IN GaAs1 - xPx. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (02): : 231 - 233
- [10] Resonant Raman scattering probe of alloying effect in GaAs1-xPx ternary alloy semiconductors PHYSICAL REVIEW B, 1996, 54 (11): : 7921 - 7928