LOWERING OF THE SMBS THRESHOLD IN III-V SEMICONDUCTORS.

被引：0
|
作者：
Gorbunov, L.M.
机构：
来源：
Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva) | 1980年 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that in narrow-band semiconductors, the threshold of the stimulated Mandel'shtam-Brillouin scattering (SMBS) can be lowered with the aid of the electroacoustic effects, by passing direct current across the magnetic field.
引用
收藏
页码：25 / 29
相关论文
共 50 条
  • [31] Specialty gases for III-V semiconductors
    Lam, Hok Tsan
    Herman, Greg
    Semiconductor International, 2002, 25 (13) : 71 - 76
  • [32] POSITRON AFFINITY IN (III-V) SEMICONDUCTORS
    AOURAG, H
    KHELIFA, B
    MATERIALS CHEMISTRY AND PHYSICS, 1991, 27 (01) : 61 - 67
  • [33] STUDIES ON III-V COMPOUND SEMICONDUCTORS
    KRANZER, D
    ZIMMERL, O
    HILLBRAND, H
    POTZL, H
    ACTA PHYSICA AUSTRIACA, 1972, 35 (1-2): : 110 - +
  • [34] CORE LEVELS OF III-V SEMICONDUCTORS
    GUDAT, W
    YU, PY
    CARDONA, M
    PENCHINA, CM
    KOCH, EE
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02): : 505 - &
  • [35] VPE GROWTH OF III-V SEMICONDUCTORS
    STRINGFELLOW, GB
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1978, 8 : 73 - 98
  • [36] COMPOSITION FLUCTUATIONS IN III-V SEMICONDUCTORS
    MACKENZIE, RAD
    LIDDLE, JA
    GROVENOR, CRM
    CEREZO, A
    JOURNAL DE PHYSIQUE, 1989, 50 (C8): : C8453 - C8458
  • [37] DEFECTS IN III-V COMPOUND SEMICONDUCTORS
    PETROFF, PM
    SEMICONDUCTORS AND SEMIMETALS, 1985, 22 : 379 - 403
  • [38] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
    JAROS, M
    BRAND, S
    PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
  • [39] DILUTED MAGNETIC III-V SEMICONDUCTORS
    MUNEKATA, H
    OHNO, H
    VONMOLNAR, S
    SEGMULLER, A
    CHANG, LL
    ESAKI, L
    PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1849 - 1852
  • [40] FACETTED STRUCTURES STUDIED BY LOW ENERGY ELECTRON DIFFRACTION - ITS APPLICATION TO III-V COMPOUND SEMICONDUCTORS.
    Chen Ping
    Hou Xiaoyuan
    Ding Xunmin
    Dong Guosheng
    Yang Shu
    Wang Xun
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (01): : 65 - 72
12345