STUDIES OF THE POSSIBILITY OF ELIMINATING THE CMOS LATCH-UP BY ELECTRON IRRADIATION.

被引:0
|
作者
Huang Huiling
Xu Shouxiang
Qui Xingyong
Zhang Xiumiao
Su Jiuling
Bao Zongming
机构
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
TRANSISTORS
引用
收藏
页码:509 / 511
相关论文
共 50 条
  • [1] A NEW MODEL FOR CMOS LATCH-UP
    WEI, L
    ELNOKALI, M
    SOLID-STATE ELECTRONICS, 1987, 30 (08) : 885 - 887
  • [2] ANALYSIS OF LATCH-UP IN CMOS IC
    KYOMASU, M
    ARAKI, T
    OHTSUKI, T
    NAKAYAMA, M
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1978, 61 (02): : 105 - 113
  • [3] LATCH-UP IN CMOS CIRCUITS - A REVIEW
    SANGIORGI, E
    FIEGNA, C
    MENOZZI, R
    SELMI, L
    RICCO, B
    EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1990, 1 (03): : 337 - 349
  • [4] LATCH-UP ON CMOS EPI DEVICES
    CHAPUIS, T
    CONSTANS, H
    ROSIER, LH
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1839 - 1842
  • [5] A BETTER UNDERSTANDING OF CMOS LATCH-UP
    HU, GJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 62 - 67
  • [6] LATCH-UP TESTING IN CMOS ICS
    MENOZZI, R
    LANZONI, M
    FIEGNA, C
    SANGIORGI, E
    RICCO, B
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (04) : 1010 - 1014
  • [7] CHARACTERISTICS OF DESTRUCTION FROM LATCH-UP IN CMOS
    COPPAGE, FN
    EVANS, DC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2226 - 2229
  • [8] PREVENTION OF CMOS LATCH-UP BY GOLD DOPING
    DAWES, WR
    DERBENWICK, GF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 2027 - 2030
  • [9] CHARACTERIZATION OF LATCH-UP FREE CMOS STRUCTURES
    SAKAI, Y
    TADAKI, Y
    KAWAMOTO, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C445 - C445
  • [10] TEST THE LATCH-UP TENDENCY OF CMOS DEVICES
    HARMAN, HL
    EDN, 1986, 31 (16) : 201 - 201