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STUDIES OF THE POSSIBILITY OF ELIMINATING THE CMOS LATCH-UP BY ELECTRON IRRADIATION.
被引:0
|
作者
:
Huang Huiling
论文数:
0
引用数:
0
h-index:
0
Huang Huiling
Xu Shouxiang
论文数:
0
引用数:
0
h-index:
0
Xu Shouxiang
Qui Xingyong
论文数:
0
引用数:
0
h-index:
0
Qui Xingyong
Zhang Xiumiao
论文数:
0
引用数:
0
h-index:
0
Zhang Xiumiao
Su Jiuling
论文数:
0
引用数:
0
h-index:
0
Su Jiuling
Bao Zongming
论文数:
0
引用数:
0
h-index:
0
Bao Zongming
机构
:
来源
:
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
|
1982年
/ 3卷
/ 06期
关键词
:
Compendex;
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
TRANSISTORS
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收藏
页码:509 / 511
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