NONLINEAR THEORY OF AVALANCHE TRANSIT-TIME DIODES WITH A WIDE MULTIPLICATION LAYER.

被引：0
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作者：
Ovchinnikov, K.D. [1 ]
机构：
[1] Leningrad Electrotechnical Inst of, Communications, USSR, Leningrad Electrotechnical Inst of Communications, USSR
来源：
Radiophysics and quantum electronics | 1985年 / 28卷 / 10期
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学科分类号：
摘要：
SEMICONDUCTOR DIODES, AVALANCHE
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页码：932 / 939
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