NONLINEAR THEORY OF AVALANCHE TRANSIT-TIME DIODES WITH A WIDE MULTIPLICATION LAYER.

被引：0

作者：

Ovchinnikov, K.D. ^{[1
]}

机构：

[1] Leningrad Electrotechnical Inst of, Communications, USSR, Leningrad Electrotechnical Inst of Communications, USSR

来源：

Radiophysics and quantum electronics | 1985年 / 28卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR DIODES, AVALANCHE

引用

页码：932 / 939

共 50 条

[31] SECOND-HARMONIC TUNING OF AVALANCHE TRANSIT-TIME OSCILLATOR
MOUTHAAN, K
RIJPERT, HPM
PROCEEDINGS OF THE IEEE, 1969, 57 (08) : 1449 - &
[32] Analysis and design of Si terahertz transit-time diodes
Bi, Xiaochuan
East, Jack R.
Ravaioli, Umberto
Haddad, George I.
SOLID-STATE ELECTRONICS, 2006, 50 (05) : 889 - 896
[33] FUNDAMENTAL LIMITATIONS OF THE CONTROLLED AVALANCHE TRANSIT-TIME TRANSISTOR (CATT)
CROSNIER, Y
GERARD, H
LEFEBVRE, M
SALMER, G
SOLID-STATE ELECTRONICS, 1981, 24 (08) : 731 - 737
[34] EFFECTS OF UNIAXIAL STRESS ON SILICON AVALANCHE TRANSIT-TIME OSCILLATORS
MIDFORD, TA
BOWERS, HC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 620 - +
[35] IMPLICATIONS OF VELOCITY OVERSHOOT IN HETEROJUNCTION TRANSIT-TIME DIODES
BLAKEY, PA
EAST, JR
ELTA, ME
HADDAD, GI
ELECTRONICS LETTERS, 1983, 19 (14) : 510 - 512
[36] Hot-electron and thermal effects on the dynamic characteristics of single-transit SiC impact-ionization avalanche transit-time diodes
J Appl Phys, 5 (3492):
[37] HOT-ELECTRON AND THERMAL EFFECTS ON THE DYNAMIC CHARACTERISTICS OF SINGLE-TRANSIT SIC IMPACT-IONIZATION AVALANCHE TRANSIT-TIME DIODES
JOSHI, RP
PATHAK, S
MCADOO, JA
JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3492 - 3497
[38] HIGH-GREQUENCY OSCILLATIONS OF P++-N+-N-N++ AVALANCHE DIODES BELOW TRANSIT-TIME CUTOFF
HOEFFLINGER, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 151 - +
[39] VAPOR-LIQUID-SOLID SILICON AVALANCHE TRANSIT-TIME DEVICES
MIDFORD, TA
RUSSELL, VA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 423 - &
[40] Noise performance of avalanche transit-time devices in the presence of acoustic phonons
Ghivela, Girish Chandra
Sengupta, Joydeep
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2019, 18 (01) : 222 - 230

← 1 2 3 4 5 →