IMPLICATIONS OF VELOCITY OVERSHOOT IN HETEROJUNCTION TRANSIT-TIME DIODES

被引：5

|

作者：

BLAKEY, PA

EAST, JR

ELTA, ME

HADDAD, GI

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 14期

关键词：

D O I：

10.1049/el:19830347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：510 / 512

页数：3

相关论文

共 50 条

[1] COLLECTOR SIGNAL DELAY TIME AND COLLECTOR TRANSIT-TIME OF HBTS INCLUDING VELOCITY OVERSHOOT
LIOU, JJ
SHAKOURI, H
SOLID-STATE ELECTRONICS, 1992, 35 (01) : 15 - 19
[2] TRANSIT-TIME OSCILLATIONS IN BARITT DIODES
COLEMAN, DJ
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1812 - &
[3] HETEROJUNCTION IMPACT AVALANCHE TRANSIT-TIME DIODES GROWN BY MOLECULAR-BEAM EPITAXY
KEARNEY, MJ
COUCH, NR
STEPHENS, J
SMITH, RS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) : 560 - 567
[4] RADIATION EFFECTS IN TRANSIT-TIME MICROWAVE DIODES
GUTMANN, RJ
BORREGO, JM
GHANDHI, SK
PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1256 - 1264
[5] SILICON PNUN AVALANCHE TRANSIT-TIME DIODES
MISAWA, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 299 - +
[6] TRANSIT-TIME REDUCTION IN ALGAAS/GAAS HBTS UTILIZING VELOCITY OVERSHOOT IN THE P-TYPE COLLECTOR REGION
MORIZUKA, K
KATOH, R
ASAKA, M
IIZUKA, N
TSUDA, K
OBARA, M
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 585 - 587
[7] TRANSIT-TIME OF LIQUID JETS DISTORTED BY VELOCITY
GRABITZ, G
MEIER, GEA
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK, 1991, 71 (05): : T471 - T474
[8] VELOCITY MODULATION IN GAAS/ALXGA1-XAS IMPACT AVALANCHE TRANSIT-TIME DIODES
KEARNEY, MJ
COUCH, NR
SMITH, RS
STEPHENS, JS
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4612 - 4614
[9] Velocity modulation in GaAs/AlxGa1-xAs impact avalanche transit-time diodes
1600, (71):
[10] Analysis and design of Si terahertz transit-time diodes
Bi, Xiaochuan
East, Jack R.
Ravaioli, Umberto
Haddad, George I.
SOLID-STATE ELECTRONICS, 2006, 50 (05) : 889 - 896

← 1 2 3 4 5 →