共 50 条
- [4] Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions [J]. Technical Physics Letters, 2014, 40 : 357 - 360
- [5] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1611 - +
- [6] TRANSIT-TIME CONSIDERATIONS IN P-I-N DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 622 - &
- [7] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE LARGE AREA SILICON P-N-JUNCTIONS [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 373 - 380
- [9] LOW-FREQUENCY MULTIPLICATION NOISE IN SILICON AVALANCHE TRANSIT-TIME DIODES [J]. PHILIPS RESEARCH REPORTS, 1971, 26 (04): : 298 - &