Effects of r.f. power on optical and electrical properties of plasma-deposited hydrogenated amorphous silicon thin films

被引：0
|
作者：
Andujar, J.L. [1 ]
Kasaneva, J. [1 ]
Serra, J. [1 ]
Canillas, A. [1 ]
Roch, C. [1 ]
Morenza, J.L. [1 ]
Bertran, E. [1 ]
机构：
[1] Universitat de Barcelona, Barcelona, Spain
来源：
Sensors and Actuators, A: Physical | 1993年 / 37-38卷 / 02期
关键词：
Fourier transform infrared absorption spectroscopy - Hydrogenated amorphous silicon thin films - Ion bombardment mechanics - Photoelectrical conductivity measurements - Photothermal deflection spectroscopy - Plasma polymerization - Radio frequency plasma deposition - Spectroellipsometry;
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页码：733 / 736
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