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- [33] Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 795 - 798
- [34] Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1044 - 1047
- [35] Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1044 - 1047
- [37] Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels Solid-State Electron., 5 (901-914):