共 50 条
- [45] Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 28 - 32
- [47] Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well Crystallography Reports, 2015, 60 : 397 - 405
- [48] Si-induced disordering of In0.53Ga0.47As/In0.52Al0.48 As multiquantum well structure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1731 - 1733
- [49] Metamorphic In0.53Ga0.47As/In0.52Al0.48As tunnel diodes grown on GaAs 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 143 - 148
- [50] Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces Mater Sci Eng B Solid State Adv Technol, 1-3 (28-32):