RADIATION INDUCED LATCH-UP MODELING OF CMOS IC'S.

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作者：
Hospelhorn, R.L. [1 ]
Shafer, B.D. [1 ]
机构：
[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA
来源：
IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期
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摘要：
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