RADIATION INDUCED LATCH-UP MODELING OF CMOS IC'S.

被引：0
|
作者：
Hospelhorn, R.L. [1 ]
Shafer, B.D. [1 ]
机构：
[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA
来源：
IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
相关论文
共 50 条
  • [31] Improvement of CMOS Latch-Up in Bootstrapping Circuit Application
    Tsai, Jung-Ruey
    Chang, Yi-Sheng
    Lin, Jui-Chang
    Bai, Shu-Ming
    Sheu, Gene
    Yang, Shao-Ming
    Wu, Chun-Hsien
    2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2014,
  • [32] Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up
    陈睿
    韩建伟
    郑汉生
    余永涛
    上官士鹏
    封国强
    马英起
    Chinese Physics B, 2015, 24 (04) : 304 - 309
  • [33] Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up
    Chen Rui
    Han Jian-Wei
    Zheng Han-Sheng
    Yu Yong-Tao
    Shangguang Shi-Peng
    Feng Guo-Qiang
    Ma Ying-Qi
    CHINESE PHYSICS B, 2015, 24 (04)
  • [34] MODELING OF DEPLOYMENT MECHANISMS FOR LATCH-UP SHOCKS
    NATARAJU, BS
    CHINNASAMY, R
    KRISHNAMURTHY, TS
    BONDE, DH
    ESA JOURNAL-EUROPEAN SPACE AGENCY, 1989, 13 (04): : 393 - 400
  • [35] STRUCTURE TO PREVENT LATCH-UP OF CMOS DEVICES.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (10):
  • [36] PREVENTING LATCH-UP IN CMOS LOGIC ICs.
    Nelmes, Guy
    New Electronics, 1987, 20 (02): : 65 - 66
  • [37] Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse
    Chen, Jie
    Du, Zhengwei
    MICROELECTRONICS RELIABILITY, 2013, 53 (03) : 371 - 378
  • [38] ANALYSIS OF LATCH-UP HOLDING VOLTAGE FOR SHALLOW TRENCH CMOS
    GUPTA, RK
    SAKAI, I
    HU, C
    ELECTRONICS LETTERS, 1986, 22 (23) : 1261 - 1263
  • [39] A compact model of holding voltage for latch-up in epitaxial CMOS
    Chen, MJ
    Hou, CS
    Tseng, PN
    Shiue, RY
    Lee, HS
    Chen, JH
    Jeng, JK
    Jou, YN
    1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, : 339 - 345
  • [40] Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave
    于新海
    柴常春
    任兴荣
    杨银堂
    席晓文
    刘阳
    Journal of Semiconductors, 2014, 35 (08) : 119 - 124
12345