Study of the alpha irradiation and thermal annealing of gold-doped n-type silicon

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J Appl Phys | / 11卷 / 5572期

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[21] RECOMBINATION LIFETIMES IN GOLD-DOPED PARA TYPE SILICON
WENAAS, EP
LEADON, RE
NABER, JA
MALLON, CE
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2893 - &
[22] PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
NEWMAN, R
PHYSICAL REVIEW, 1954, 94 (06): : 1530 - 1531
[23] INFLUENCE OF EXTERNAL PERTURBATIONS ON BEHAVIOUR OF STATIONARY ELECTRICAL DOMAINS IN GOLD-DOPED N-TYPE GE
KUROVA, IA
VRANA, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01): : 269 - &
[24] NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
BARRETT, JR
GERHARD, GC
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 900 - &
[25] ELECTRICAL PROPERTIES OF GOLD-DOPED SILICON
BRUCKNER, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03): : 685 - &
[26] THERMODYNAMIC PROPERTIES OF GOLD-DOPED SILICON
VAKHABOV, DA
ZAKHIROV, AS
IGAMBERDYEV, KT
MAMADALIMOV, AT
TURSUNOV, SO
YULDASHEV, KS
KHABIBULLAEV, PK
FIZIKA TVERDOGO TELA, 1988, 30 (07): : 1979 - 1983
[27] FORMATION AND PROPERTIES OF DEFECTS IN N-TYPE SILICON AFTER IRRADIATION FOLLOWED BY ANNEALING
KUCHINSKII, PV
LOMAKO, VM
SHAKHLEVICH, LN
SEMICONDUCTORS, 1994, 28 (11) : 1062 - 1066
[28] DOUBLE INJECTION IN GOLD-DOPED SILICON
VARLAMOV, IV
SONDAEVS.IA
SONDAEVS.VP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 375 - &
[29] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
BYKOVSKII, YA
VINOGRAD.KN
ZUEV, VV
KOZYREV, YP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 933 - +
[30] ANNEALING STUDY IN ELECTRON-IRRADIATED N-TYPE SILICON
TAUKE, RV
FARADAY, BJ
JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 5009 - &

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